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AUIRLR2703
Static Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
30
––– ––– V
V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J Breakdown Voltage Temp. Coefficient
–––
0.030 ––– V/°C Reference to 25°C, I D = 1mA
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
––– 0.045
––– 0.065
?
V GS = 10V, I D = 14A
V GS = 4.5V, I D = 12A
V GS(th)
gfs
I DSS
I GSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
1.0
6.4
–––
–––
–––
–––
––– ––– V
––– ––– S
––– 25 μA
––– 250
––– 100 nA
––– -100
V DS = V GS , I D = 250μA
V DS = 25V, I D = 14A
V DS = 30V, V GS = 0V
V DS = 24V, V GS = 0V, T J = 150°C
V GS = 16V
V GS = -16V
Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Q g
Total Gate Charge
–––
–––
15
I D = 14A
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
–––
–––
–––
8.5
140
12
20
4.6
9.3
–––
–––
–––
–––
nC
ns
V DS = 24V
V GS = 4.5V
V DD = 15V
I D = 14A
R G = 12 ?
V GS = 4.5V, R D = 1.1 ?
L D
Internal Drain Inductance
–––
4.5
–––
Between lead,
D
L S
Internal Source Inductance
–––
7.5
–––
nH
6mm (0.25in.)
from package
G
and center of die contact
S
C iss
C oss
Input Capacitance
Output Capacitance
–––
–––
450
210
–––
–––
V GS = 0V
V DS = 25V
C rss Reverse Transfer Capacitance
Diode Characteristics
–––
110
–––
pF
? = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
I S
Continuous Source Current
–––
–––
23
MOSFET symbol
D
(Body Diode)
A
showing the
I SM
Pulsed Source Current
(Body Diode)
–––
–––
96
integral reverse
p-n junction diode.
G
S
V SD
t rr
Q rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
65
140
1.3
97
210
V
ns
nC
T J = 25°C, I S = 14A, V GS = 0V
T J = 25°C, I F = 14A
di/dt = 100A/μs
t on
Notes:
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? V DD = 15V, starting T J = 25°C, L =570μH
R G = 25 ? , I AS = 14A. (See Figure 12)
? I SD ≤ 14A, di/dt ≤ 140A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C.
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
2
? Caculated continuous current based on maximum allowable
junction temperature. Package limitation current = 20A.
? This is applied for I-PAK, L S of D-PAK is measured
between lead and center of die contact.
? Uses IRL2703 data and test conditions.
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